Author(s): F.A. Abou-Elfotouh, M.A. AI-mass'ari, A. Felimban and M.K. Katib
Article publication date: 1983-09-01
Vol. 1 No. 2 (yearly), pp. 215-222.
156
Keywords
Solar cell, photovoltaic effect, hot substrates
Abstract
The practical utilization of the photovoltaic effect in hybrid junctions between p-Si substrates and n- (Znx -Cd1-x) S was observed. The performance of junctions prepared on hot substrates (Tsb > 200⁰C) and annealed in sulfur and air atmosphere for 20 minutes at temperature Ta> 350⁰C is given by 0.57 V for Voc , 15 mA/cm2 for Isc and 7 percent for conversion efficiency. A proper cleaning method to get rid of oxygen contaminating the Si surface is necessary.