Author(s): Muhammed A.S. Al-Mass'ari
Article publication date: 1985-09-01
Vol. 3 No. 2 (yearly), pp. 229-240.
153
Keywords
solar cells, transport equations, physics
Abstract
The operation and characteristics of the (Ga(1-x) Alx) As/GaAs heterojunction solar cell are studied numerically in detail. The complete system of transport equations governing the behavior of this p-n device established and reformulated for computer calculation. Within a very thin top layer (below 0.2 micro) the conversion efficiency is computed to be 23.5% for x=0.8, provided that the junction depth is less than 0.5 micro. The depletion width at zero bias is determined to be 0.1 micron.
Although this cell type is quite costly, its predicted high AM0 efficiency makes it a promising candidate for both space and terrestrial concentrator applications