Computer-Aided Design and Experimental Applications of Tunnel Diodes As A Narrow Band Amplifier Systems PDF

Keywords

tunnel diode amplifier circuits, computer-aided design, band amplifier systems

Abstract

The purpose of this paper is to shed further light on the operating characteristics and limitations of tunnel diode amplifier circuits, particularly those with different doping concentrations. This has been achieved by a theoretical modeling, economical computer programs and experimental measurements. The behaviour of the tunnel diode operating at high frequency circuits, and the effects of material parameters and doping levels on their performance are presented and discussed. This leads to a better understanding of these devices and their limitations. It is found that the amplifier gain exceeds unity, and it increases with frequency reaching a peak at a certain value of the operating frequency, then it decreases at higher frequencies, down to a constant plateau. Results of the predicted, measured gain show that it depends on the device physical parameters and its material, circuit parameters, and operating conditions. The shape of the response curve of the amplifier circuit is a function of the dynamic negative conductance and also the resonance nature of the circuit.