Four-Photon Transitions in Semiconductors PDF

Keywords

Physics, semiconductors, photons

Abstract

The four-photon interband electronic transitions have been theoretically investigated in semiconductors. Expressions for the absorption of four-photons are calculated using fourth-order perturbation theory through four different band models. The results show that the five-band model gives the dominant contribution to the absorption coefficient. A numerical application for the case of ZnS is in agreement with the available experimental results.